Jau-Shiung Fang 方昭訓
Job Title
Professor
Department
Materials Science and Engineering
Laboratory
Microelectronic Materials and Processing
Expertise
Semiconductor Materials and Processing
jsfang@nfu.edu.tw
Introduction
Semiconductor interconnections play a pivotal role in the intricate world of
electronic devices, forming the critical pathways that enable the seamless flow of
electrical signals within integrated circuits (ICs). As the backbone of modern
electronics, these interconnections serve as the conduits for data transmission,
ensuring the efficient communication between various components within a
semiconductor device. In an era characterized by the relentless pursuit of
miniaturization and enhanced performance, the design and optimization of
semiconductor interconnections have become paramount.
We focus on the thin film deposition technology on the process of
semiconductor interconnection. The deposition technology includes sputtering and
electrochemical atomic layer deposition.
1 J.S. Fang, G.S. Chen, C.C. Chang, C.N. Hsiao, W.C. Chen, Y.L. Cheng, Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliabilityenhancement for extremely dilute alloying of manganese oxide, J. Alloy & Compd., 970 (2024) 172591.
2 Y.L. Cheng, H.C. Huang, W.F. Peng, G.S. Chen, J.S. Fang, Comparison of Cobalt Integration with Various Dielectric Materials under Thermal and Electrical Stress, Coatings, 13 (2023) 1818.
3 J.S. Fang, K.H. Chen, Y.L. Cheng, G.S. Chen, Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement, Mater. Chem. Phys., 296 (2023) 127222.
4 Y.L. Cheng, W.F. Peng, C.J. Huang, G.S. Chen, J.S. Fang, Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-
Dielectric-Constant Materials, Molecules, 28 (2023) 1134. 5 G.S. Chen, Y.C. Pan; W.C. Chen, C.N. Hsiao, C.C. Chang; Y.L. Cheng, J.S. Fang, Dual near-zero-thickness sealing for the strengthening of cobalt thin films and nano-lines for future interconnect application, Appl. Surf. Sci., 609 (2023) 155387.
6 Y.L. Cheng, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of Precursors for Self-Assembled Monolayers as Cu barriers, ECS J. Solid State. Sci. Technol., 12 (2023) 063001.
7 J.S. Fang, C.E. Lee, Y.L. Cheng, G.S. Chen, Reinforcement in electromigration reliability of Cu interconnects by alloying of extremely dilute MnO, J. Alloy & Compd., 5 (2023) 169974.
8 Y.L. Cheng, K.H. Wang, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics, Materials, 16 (2023) 1452.
9 T.K. Tsai, I.T. Shih, Y.L. Cheng, G.S Chen, J.S. Fang, Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron, Mater. Chem. Phys., 285 (2022) 126-136.
10 Y.L. Cheng, W.F. Peng, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH Dielectrics by Decyltrimethoxysilane Vapor Treatment, Coatings, 12 (2022) 926.
11 G.S. Chen, C.E. Lee, Y.L. Cheng, J.S Fang, C.N. Hsiao, W.C. Chen, Y.H. Chang, Y.C. Pan, W.Lee, T.H. Su, Enhancement of Electromigration Reliability of Electroless-Plated Nanoscaled Copper Interconnects by Complete Encapsulation of a 1 nm-Thin Self-Assembled Monolayer, J. Electrochem. Soc., 169 (2022) 082519.
12 J.S. Fang, Y.L. Wu, Y.L. Cheng, G.S. Chen, Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects, J. Electrochemical. Soc., 168 (2021) 042505.
13 J.S. Fang, C.E. Lee, Y.L. Cheng, G.S. Chen, Strengthening the Electromigration Resistance of Nanoscaled Copper Lines by (3- aminopropyl)trimethoxysilane Self-Assembled Monolayer, ECS J. Solid State Sci. Technol., 10 (2021) 083007.
14 G.S. Chen, W.H. Chang, C.C. Chang, Y.H. Chien, J.S. Fang, Y.L. Cheng, Structural models and barrier properties of amine-terminated trialkoxysilane monolayers incubated in nonpolar vs. polar protic solvents, Mater. Chem. Phys., 274 (2021) 125113.
15 G.S. Chen, C.E. Lee, T.M. Yang, Y.L. Cheng, J.S. Fang, All-wet encapsulation and electroless superfilling process for the fabrication of self- assembled-monolayer encapsulated copper interconnects with enhanced electromigration reliability. Materials Lett., 304 (2021) 130718.
16 J.S. Fang, T.M. Yang, Y.L. Cheng, G.S. Chen, (3-Aminopropyl)trimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization. ECS J. Solid State Sci. Technol., 10 (2021) 023003.
17 Y.L. Cheng, W.F. Peng, C.Y. Lee, G.S. Chen, Y.N. Lin, J.S. Fang, Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization. ECS J. Solid State Sci. Technol., 10 (2021) 065014.
18 G.S. Chen, W.L. Gao, J.S. Fang, Y.L. Cheng, Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloy for metallization of copper without a conventional metallic barrier. Mater. Chem. Phys., 259 (2021) 124034.
19 C.Y. Lee, G.S. Chen, J.S. Fang, Y.L. Cheng, Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film. ECS J. Solid State Sci. Technol., 6 (2021) 063005.
20 J.S. Fang, T.M. Yang, Y.C. Pan, G.Y. Lai, Y.L. Cheng, G.S. Chen, Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments, Langmuir, 36 (2020) 15153–15161.
21 L.C. Yang, D.R. Jung, F.R. Po, C.H. Hsu, J.S. Fang, Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets. Coatings, 10 (2020) 708.
22 G.S. Chen, R.J. Tau, J.S. Fang, Y.L. Cheng, Y.C. Chen, Mechanism of strengthening electroless plated copper films with extremely T dilute oxide dispersion alloying: The optimal MnO addition. Appl. Surf. Sci., 527 (2020) 146818.
23 Y.L. Cheng, H.C. Huang, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of Cu and Co Integration with Porous Low-k SiOCH Dielectrics. Thin Solid Films, 704 (2020) 138010.
24 Y.L. Cheng, J.S. Fang, G.S. Chen, C.Y. Lee, Effect of Post- annealing on Reliability of Cu/Low-k Interconnects. ECS J. Solid. State Sci. Technol., 9 (2020) 054502.
25 Y.L. Cheng, Y.L. Lin, G.S. Chen, J.S. Fang, Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing. ECS J. Solid State Sci. Technol., 9 (2020) 073002.
26 J.S. Fang, Y.F. Sie, Y.L. Cheng, G.S. Chen, A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu- SLRR. Coatings, 10 (2020)164.
1 J.S. Fang, G.S. Chen, C.C. Chang, C.N. Hsiao, W.C. Chen, Y.L. Cheng, Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliabilityenhancement for extremely dilute alloying of manganese oxide, J. Alloy & Compd., 970 (2024) 172591.
2 Y.L. Cheng, H.C. Huang, W.F. Peng, G.S. Chen, J.S. Fang, Comparison of Cobalt Integration with Various Dielectric Materials under Thermal and Electrical Stress, Coatings, 13 (2023) 1818.
3 J.S. Fang, K.H. Chen, Y.L. Cheng, G.S. Chen, Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement, Mater. Chem. Phys., 296 (2023) 127222.
4 Y.L. Cheng, W.F. Peng, C.J. Huang, G.S. Chen, J.S. Fang, Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-
Dielectric-Constant Materials, Molecules, 28 (2023) 1134. 5 G.S. Chen, Y.C. Pan; W.C. Chen, C.N. Hsiao, C.C. Chang; Y.L. Cheng, J.S. Fang, Dual near-zero-thickness sealing for the strengthening of cobalt thin films and nano-lines for future interconnect application, Appl. Surf. Sci., 609 (2023) 155387.
6 Y.L. Cheng, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of Precursors for Self-Assembled Monolayers as Cu barriers, ECS J. Solid State. Sci. Technol., 12 (2023) 063001.
7 J.S. Fang, C.E. Lee, Y.L. Cheng, G.S. Chen, Reinforcement in electromigration reliability of Cu interconnects by alloying of extremely dilute MnO, J. Alloy & Compd., 5 (2023) 169974.
8 Y.L. Cheng, K.H. Wang, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics, Materials, 16 (2023) 1452.
9 T.K. Tsai, I.T. Shih, Y.L. Cheng, G.S Chen, J.S. Fang, Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron, Mater. Chem. Phys., 285 (2022) 126-136.
10 Y.L. Cheng, W.F. Peng, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH Dielectrics by Decyltrimethoxysilane Vapor Treatment, Coatings, 12 (2022) 926.
11 G.S. Chen, C.E. Lee, Y.L. Cheng, J.S Fang, C.N. Hsiao, W.C. Chen, Y.H. Chang, Y.C. Pan, W.Lee, T.H. Su, Enhancement of Electromigration Reliability of Electroless-Plated Nanoscaled Copper Interconnects by Complete Encapsulation of a 1 nm-Thin Self-Assembled Monolayer, J. Electrochem. Soc., 169 (2022) 082519.
12 J.S. Fang, Y.L. Wu, Y.L. Cheng, G.S. Chen, Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects, J. Electrochemical. Soc., 168 (2021) 042505.
13 J.S. Fang, C.E. Lee, Y.L. Cheng, G.S. Chen, Strengthening the Electromigration Resistance of Nanoscaled Copper Lines by (3- aminopropyl)trimethoxysilane Self-Assembled Monolayer, ECS J. Solid State Sci. Technol., 10 (2021) 083007.
14 G.S. Chen, W.H. Chang, C.C. Chang, Y.H. Chien, J.S. Fang, Y.L. Cheng, Structural models and barrier properties of amine-terminated trialkoxysilane monolayers incubated in nonpolar vs. polar protic solvents, Mater. Chem. Phys., 274 (2021) 125113.
15 G.S. Chen, C.E. Lee, T.M. Yang, Y.L. Cheng, J.S. Fang, All-wet encapsulation and electroless superfilling process for the fabrication of self- assembled-monolayer encapsulated copper interconnects with enhanced electromigration reliability. Materials Lett., 304 (2021) 130718.
16 J.S. Fang, T.M. Yang, Y.L. Cheng, G.S. Chen, (3-Aminopropyl)trimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization. ECS J. Solid State Sci. Technol., 10 (2021) 023003.
17 Y.L. Cheng, W.F. Peng, C.Y. Lee, G.S. Chen, Y.N. Lin, J.S. Fang, Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization. ECS J. Solid State Sci. Technol., 10 (2021) 065014.
18 G.S. Chen, W.L. Gao, J.S. Fang, Y.L. Cheng, Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloy for metallization of copper without a conventional metallic barrier. Mater. Chem. Phys., 259 (2021) 124034.
19 C.Y. Lee, G.S. Chen, J.S. Fang, Y.L. Cheng, Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film. ECS J. Solid State Sci. Technol., 6 (2021) 063005.
20 J.S. Fang, T.M. Yang, Y.C. Pan, G.Y. Lai, Y.L. Cheng, G.S. Chen, Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments, Langmuir, 36 (2020) 15153–15161.
21 L.C. Yang, D.R. Jung, F.R. Po, C.H. Hsu, J.S. Fang, Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets. Coatings, 10 (2020) 708.
22 G.S. Chen, R.J. Tau, J.S. Fang, Y.L. Cheng, Y.C. Chen, Mechanism of strengthening electroless plated copper films with extremely T dilute oxide dispersion alloying: The optimal MnO addition. Appl. Surf. Sci., 527 (2020) 146818.
23 Y.L. Cheng, H.C. Huang, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of Cu and Co Integration with Porous Low-k SiOCH Dielectrics. Thin Solid Films, 704 (2020) 138010.
24 Y.L. Cheng, J.S. Fang, G.S. Chen, C.Y. Lee, Effect of Post- annealing on Reliability of Cu/Low-k Interconnects. ECS J. Solid. State Sci. Technol., 9 (2020) 054502.
25 Y.L. Cheng, Y.L. Lin, G.S. Chen, J.S. Fang, Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing. ECS J. Solid State Sci. Technol., 9 (2020) 073002.
26 J.S. Fang, Y.F. Sie, Y.L. Cheng, G.S. Chen, A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu- SLRR. Coatings, 10 (2020)164.
